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BSG0813NDIATMA1
Transistors - FETs, MOSFETs - RF
- Manufacturer No:
- BSG0813NDIATMA1
- Manufacture:
- Infineon Technologies
- Datasheet:
- BSG0813NDIATMA1
- Description:
- MOSFET 2N-CH 25V 19A/33A 8TISON
In Stock
0 pcs On sales
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Infineon Technologies BSG0813NDIATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSG0813NDIATMA1.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- Infineon Technologies
- Packaging
- Reel - TR
- Status
- Active
- FET Type
- 2 N-Channel (Dual) Asymmetrical
- FET Feature
- Logic Level Gate, 4.5V Drive
- Drain-Source Breakdown Voltage
- 25V
- Continuous Drain Current at 25°C
- 19A, 33A
- Maximum Rds On at Id,Vgs
- 3 mOhm @ 20A, 10V
- Gate-Source Threshold Voltage
- 2V @ 250μA
- Max Gate Charge
- 8.4nC @ 4.5V
- Max Input Capacitance
- 1100pF @ 12V
- Maximum Power Dissipation
- 2.5W
- Temperature Range - Operating
- -55°C to 155°C (TJ)
- Mounting
- SMD (SMT)
- Case / Package
- PG-TISON-8
- Popularity
- Medium
- Fake Threat In the Open Market
- 46 pct.
- Supply and Demand Status
- Balance
Company Profile
BSG0813NDIATMA1 Relevant information
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BSG0813NDIATMA1
MOSFET 2N-CH 25V 19A/33A 8TISON