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BSG0811NDATMA1

Name: BSG0811NDATMA1
Brand: Infineon Technologies
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: BSG0811NDATMA1
Manufacture:: Infineon Technologies
Package:: 8-PowerTDFN
Datasheet:: BSG0811NDATMA1
Description:: MOSFET 2N-CH 25V 19A/41A 8TISON / Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 19A, 41A 2.5W Surface Mount PG-TISON-8

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies BSG0811NDATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSG0811NDATMA1.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr: Infineon Technologies
Series: OptiMOS™
Package: Tape & Reel
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 41A
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
Power - Max: 2.5W
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Mounting: SMD (SMT)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8
Base Product Number: BSG0811
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095
Other Names: BSG0811NDATMA1-ND,BSG0811NDATMA1TR,SP001075902,BSG0811NDATMA1CT,BSG0811NDATMA1DKR
Standard Package: 5,000
Fake Threat In the Open Market: 49 pct.

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