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TPN2R203NC,L1Q

Name: TPN2R203NC,L1Q
Brand: Toshiba Semiconductor and Storage
Price: 3.13 USD
Rating: 4.8 (6586 reviews)

FETs - Single

Manufacturer No:: TPN2R203NC,L1Q
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: TPN2R203NC,L1Q
Description:: MOSFET N-CH 30V 45A 8-TSON

In Stock

17271 pcs On sales

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Delivery Time

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Product Attribute

Toshiba Semiconductor and Storage TPN2R203NC,L1Q technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TPN2R203NC,L1Q.

Manufacturer: Toshiba Semiconductor and Storage
Packaging: Reel
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) at 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Maximum) at Id, Vgs: 2.2mOhm at 22.5A, 10V
Vgs(th) (Maximum) at Id: 2.3V at 500μA
Gate Charge (Qg) (Maximum) at Vgs: 34nC at 10V
Maximum Vgs: ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2230pF at 15V
Power Dissipation (Maximum): 700mW , 42W (Tc)
Temperature Range - Operating: 150°C
Mounting Style: SMD
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Manufacturer Package: 8-PowerVDFN
Manufacturer Pack Quantity: 5,000
MSL Level: 1 (Unlimited)
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Company Profile

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