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TPN13008NH,L1Q

Name: TPN13008NH,L1Q
Brand: Toshiba Semiconductor and Storage
Price: 5.16 USD
Rating: 4.8 (6586 reviews)

FETs - Single

Manufacturer No:: TPN13008NH,L1Q
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: TPN13008NH,L1Q
Description:: MOSFET N-CH 80V 40A 8TSON

In Stock

8000 pcs On sales

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Product Attribute

Toshiba Semiconductor and Storage TPN13008NH,L1Q technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TPN13008NH,L1Q.

Categories: Discrete Semiconductor Products
Manufacturer: Toshiba Semiconductor and Storage
Packaging: Reel
Transistor Polarity: N-Channel
Technology: MOSFET
Vds - Drain-Source Breakdown Voltage: 80V
Id - Continuous Drain Current: 18A
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Maximum) at Id, Vgs: 13.3mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 200μA
Gate Charge (Qg) (Maximum) at Vgs: 18nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1600pF at 40V
Power Dissipation (Maximum): 700mW, 42W
Temperature Range - Operating: 150°C
Mounting Style: SMD
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Manufacturer Package: 8-PowerVDFN
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Popularity: Low
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

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