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SCTW40N120G2VAG

Name: SCTW40N120G2VAG
Brand: STMicroelectronics
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: SCTW40N120G2VAG
Manufacture:: STMicroelectronics
Package:: TO-247-3
Datasheet:: SCTW40N120G2VAG

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0 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

STMicroelectronics SCTW40N120G2VAG technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics SCTW40N120G2VAG.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: STMicroelectronics
Series: Automotive, AEC-Q101
Package: Tube
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Vgs (Max): +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Power Dissipation (Max): 290W (Tc)
Temperature Range - Operating: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: HiP247™
Package / Case: TO-247-3
Base Product Number: SCTW40
Other Names: 497-SCTW40N120G2VAG
Standard Package: 30
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095
Fake Threat In the Open Market: 71 pct.

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