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NVD3055L170T4G

FETs - Single

Manufacturer No:
NVD3055L170T4G
Manufacture:
ON Semiconductor
Datasheet:
NVD3055L170T4G
Description:
MOSFET N-CH 60V 9A DPAK / Power MOSFET

In Stock

2500 pcs On sales

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Product Attribute

ON Semiconductor NVD3055L170T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVD3055L170T4G.

Manufacturer
ON Semiconductor
Packaging
Reel
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) at 25°C
9A
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Maximum) at Id, Vgs
170mOhm at 4.5A, 5V
Vgs(th) (Maximum) at Id
2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
10nC at 5V
Maximum Vgs
±15V
Input Capacitance (Ciss) (Maximum) at Vds
275pF at 25V
Power Dissipation (Maximum)
1.5W , 28.5W
Temperature Range - Operating
-55°C ~ 175°C
Mounting Style
SMD
Supplier Device Package
DPAK
Manufacturer Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity
2,500
MSL Level
1 (Unlimited)
Popularity
Low
Fake Threat In the Open Market
53 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

NVD3055L170T4G Relevant information

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NVD3055L170T4G
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MOSFET N-CH 60V 9A DPAK / Power MOSFET

NVD3055L170T4G-VF01
NVD3055L170T4G-VF01

MOSFET N-CH 60V 9A DPAK

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