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NDD60N900U1-1G
- Manufacturer No:
- NDD60N900U1-1G
- Manufacture:
- ON Semiconductor
- Datasheet:
- NDD60N900U1-1G
- Description:
- N-Channel Power MOSFET | MOSFET N-CH 600V 5.9A IPAK-4
In Stock
11100 pcs On sales
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
ON Semiconductor NDD60N900U1-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NDD60N900U1-1G.
- Popularity
- Medium
- Fake Threat In the Open Market
- 52 pct.
- Supply and Demand Status
- Limited
- MSL Level
- 3 (168 Hours)
- Manufacturer Pack Quantity
- 75
- Manufacturer Package
- TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package
- I-PAK
- Mounting Style
- Through Hole
- Temperature Range - Operating
- -55°C ~ 150°C
- Power Dissipation (Maximum)
- 74W
- Input Capacitance (Ciss) (Maximum) at Vds
- 360pF at 50V
- Gate Source Voltage (Maximum)
- ±25V
- Gate Charge (Qg) (Maximum) at Vgs
- 12nC at 10V
- Gate Source Voltage(th) (Maximum) at Id
- 4V at 250μA
- Rds On (Maximum) at Id, Vgs
- 900mOhm at 2.5A, 10V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Id - Continuous Drain Current
- 5.7A
- Vds - Drain-Source Breakdown Voltage
- 600V
- Technology
- MOSFET
- Transistor Polarity
- N-Channel
- Status
- Obsolete
- Packaging
- Tube
- Manufacturer
- ON Semiconductor
- Categories
- Discrete Semiconductor Products
Company Profile
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