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FQI7N80TU

FETs - Single

Manufacturer No:
FQI7N80TU
Manufacture:
ON Semiconductor
Datasheet:
FQI7N80TU
Description:
MOSFET N-CH 800V 6.6A I2PAK

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11400 pcs On sales

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Product Attribute

ON Semiconductor FQI7N80TU technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FQI7N80TU.

Categories
Discrete Semiconductor Products
Manufacturer
ON Semiconductor
Packaging
Tube
Transistor Polarity
N-Channel
Technology
MOSFET
Vds - Drain-Source Breakdown Voltage
800V
Id - Continuous Drain Current
6.6A
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Maximum) at Id, Vgs
1.5Ohm at 3.3A, 10V
Gate Source Voltage(th) (Maximum) at Id
5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
52nC at 10V
Gate Source Voltage (Maximum)
±30V
Input Capacitance (Ciss) (Maximum) at Vds
1850pF at 25V
Power Dissipation (Maximum)
3.13W, 167W
Temperature Range - Operating
-55°C ~ 150°C
Mounting Style
Through Hole
Supplier Device Package
I2PAK (TO-262)
Manufacturer Package
TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity
1,000
MSL Level
1 (Unlimited)
Popularity
Low
Fake Threat In the Open Market
37 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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