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IRL40B212

Name: IRL40B212
Brand: Infineon Technologies
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: IRL40B212
Manufacture:: Infineon Technologies
Package:: TO-220-3
Datasheet:: IRL40B212
Description:: MOSFET N-CH 40V 195A TO220AB / N-Channel 40 V 195A (Tc) 231W (Tc) Through Hole TO-220AB

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0 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IRL40B212 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL40B212.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: Infineon Technologies
Series: HEXFET®, StrongIRFET™
Package: Tube
Product Status: Last Time Buy
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
Power Dissipation (Max): 231W (Tc)
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Product Number: IRL40B212
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095
Other Names: 2156-IRL40B212,SP001578760,INFIRFIRL40B212
Standard Package: 1,000
Fake Threat In the Open Market: 61 pct.

Company Profile

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