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IPD60N10S412ATMA1

Name: IPD60N10S412ATMA1
Brand: Infineon Technologies
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

PMIC - Power Management - Specialized

Manufacturer No:: IPD60N10S412ATMA1
Manufacture:: Infineon Technologies
Package:: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet:: IPD60N10S412ATMA1
Description:: MOSFET N-CH 100V 60A TO252-3 / N-Channel 100 V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPD60N10S412ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD60N10S412ATMA1.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: Infineon Technologies
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tape & Reel
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Power Dissipation (Max): 94W (Tc)
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Mounting: SMD (SMT)
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number: IPD60N10
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095
Other Names: IPD60N10S412ATMA1-ND,448-IPD60N10S412ATMA1CT,448-IPD60N10S412ATMA1DKR,448-IPD60N10S412ATMA1TR,INFINFIPD60N10S412ATMA1,SP001102936,2156-IPD60N10S412ATMA1
Standard Package: 2,500
Fake Threat In the Open Market: 68 pct.

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