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IPD40N03S4L08ATMA1

Transistors - FETs, MOSFETs - RF

Manufacturer No:
IPD40N03S4L08ATMA1
Manufacture:
Infineon Technologies
Datasheet:
IPD40N03S4L08ATMA1
Description:
MOSFET N-CH TO252-3

In Stock

130000 pcs On sales

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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPD40N03S4L08ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD40N03S4L08ATMA1.

Categories
Discrete Semiconductor Products
Manufacturer
Infineon Technologies
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
30V
Continuous Drain Current at 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate-Source Threshold Voltage
2.2V @ 13μA
Max Gate Charge
20nC @ 10V
Max Input Capacitance
1520pF @ 15V
Maximum Gate-Source Voltage
±16V
Power Dissipation (Max)
42W (Tc)
Maximum Rds On at Id,Vgs
8.3 mOhm @ 40A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
SMD (SMT)
Case / Package
PG-TO252-3-11
Dimension
TO-252-3, DPak (2 Leads + Tab), SC-63
Popularity
Medium
Fake Threat In the Open Market
41 pct.
Supply and Demand Status
Sufficient

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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