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HGT1S10N120BNST

Name: HGT1S10N120BNST
Brand: Fairchild/ON Semiconductor
Price: 19.34 USD
Rating: 4.8 (6586 reviews)

IGBTs - Single

Manufacturer No:: HGT1S10N120BNST
Manufacture:: Fairchild/ON Semiconductor
Datasheet:: HGT1S10N120BNST
Description:: IGBT 1200V 35A 298W TO263AB

In Stock

23700 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Fairchild/ON Semiconductor HGT1S10N120BNST technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGT1S10N120BNST.

Categories: Discrete Semiconductor Products
Manufacturer: Fairchild/ON Semiconductor
Packaging: Reel - TR
Status: Active
IGBT Type: NPT
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Current Collector: 35A
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 10A
Maximum Power Dissipation: 298W
Total Switching Energy(Ets): 320μJ (on), 800μJ (off)
Input Type: Standard
Gate Charge: 100nC
Turn-on and Turn-off delay time: 23ns/165ns
Testing Conditions: 960V, 10A, 10 Ohm, 15V
Temperature Range - Operating: -55°C to 150°C (TJ)
Mounting: SMD (SMT)
Case / Package: TO-263AB
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 800

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