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SI8457DB-T1-E1

Transistors - FETs, MOSFETs - RF

Manufacturer No:
SI8457DB-T1-E1
Manufacture:
Vishay
Package:
4-UFBGA
Datasheet:
SI8457DB-T1-E1
Description:
MOSFET P-CH 12V 4MICRO FOOT / P-Channel 12 V 6.5A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)

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Shipping Cost
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Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SI8457DB-T1-E1 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI8457DB-T1-E1.

Category
Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
19mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
93 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 6 V
Power Dissipation (Max)
1.1W (Ta), 2.7W (Tc)
Temperature Range - Operating
-55°C ~ 150°C (TJ)
Mounting
SMD (SMT)
Supplier Device Package
4-MICRO FOOT® (1.6x1.6)
Package / Case
4-UFBGA
Base Product Number
SI8457
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SI8457DB-T1-E1DKR,SI8457DB-T1-E1CT,SI8457DB-T1-E1TR
Standard Package
3,000
Fake Threat In the Open Market
53 pct.

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