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SI7157DP-T1-GE3

FETs - Single

Manufacturer No:
SI7157DP-T1-GE3
Manufacture:
Vishay
Datasheet:
SI7157DP-T1-GE3
Description:
MOSFET P-CH 20V 60A PPAK SO-8

In Stock

194 pcs On sales

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Product Attribute

Vishay SI7157DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI7157DP-T1-GE3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay Siliconix
Packaging
Reel
Transistor Polarity
P-Channel
Technology
MOSFET
Vds - Drain-Source Breakdown Voltage
20V
Id - Continuous Drain Current
60A
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Maximum) at Id, Vgs
1.6mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id
1.4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
625nC at 10V
Gate Source Voltage (Maximum)
±12V
Input Capacitance (Ciss) (Maximum) at Vds
22000pF at 10V
Power Dissipation (Maximum)
6.25W, 104W
Temperature Range - Operating
-55°C ~ 150°C
Mounting Style
SMD
Supplier Device Package
PowerPAK SO-8
Manufacturer Package
PowerPAK SO-8
Manufacturer Pack Quantity
1
MSL Level
1 (Unlimited)
Popularity
Low
Fake Threat In the Open Market
50 pct.
Supply and Demand Status
Balance

Company Profile

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