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HN1B04FU-GR(L,F,T)

Name: HN1B04FU-GR(L,F,T)
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

RF Transistors (BJT)

Manufacturer No:: HN1B04FU-GR(L,F,T)
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: HN1B04FU-GR(L,F,T)
Description:: Trans Gp Bjt Npn/pnp 50V 0.15A 200MW 6-PIN Us T/r

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0 pcs On sales

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage HN1B04FU-GR(L,F,T) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage HN1B04FU-GR(L,F,T).

Collector Base Voltage (VCBO): -50 V
Collector Emitter Breakdown Voltage: 50 V
Collector Emitter Saturation Voltage: 100 mV
Collector Emitter Voltage (VCEO): 250 mV
Element Configuration: Dual
Emitter Base Voltage (VEBO): -5 V
Gain Bandwidth Product: 120 MHz
hFE Min: 120
Max Breakdown Voltage: 50 V
Max Collector Current: 150 mA
Maximum Operating Temperature: 125 °C
Max Power Dissipation: 200 mW
Min Operating Temperature: -55 °C
Mount: Surface Mount
Number of Elements: 2
Number of Pins: 6
Polarity: NPN, PNP
Power Dissipation: 200 mW
Radiation Hardening: No
RoHS: Compliant
Transition Frequency: 150 MHz
Categories: RF Transistors(BJT)
Manufacturer: Toshiba Semiconductor and Storage
Popularity: Low
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Shortage

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