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2SK3662(F)

FETs - Single

Manufacturer No:
2SK3662(F)
Manufacture:
Toshiba Semiconductor and Storage
Datasheet:
2SK3662(F)
Description:
MOSFET N-CH 60V 35A TO220NIS

In Stock

8000 pcs On sales

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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage 2SK3662(F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SK3662(F).

Manufacturer
Toshiba Semiconductor and Storage
Packaging
Bulk
Part Status
Obsolete (End Of Life)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) at 25°C
35A
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Maximum) at Id, Vgs
12.5mOhm at 18A, 10V
Vgs(th) (Maximum) at Id
2.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs
91nC at 10V
Maximum Vgs
±20V
Input Capacitance (Ciss) (Maximum) at Vds
5120pF at 10V
Power Dissipation (Maximum)
35W (Tc)
Temperature Range - Operating
150°C
Mounting Style
Through Hole
Supplier Device Package
TO-220NIS
Manufacturer Package
TO-220-3 Full Pack
Manufacturer Pack Quantity
50
MSL Level
1 (Unlimited)
Popularity
Medium
Fake Threat In the Open Market
66 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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