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STW28N60DM2

FETs - Single

Manufacturer No:
STW28N60DM2
Manufacture:
STMicroelectronics
Datasheet:
STW28N60DM2
Description:
MOSFET N-CH 600V 21A / Extremely low gate charge and input capacitance

In Stock

6100 pcs On sales

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Product Attribute

STMicroelectronics STW28N60DM2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW28N60DM2.

Supply and Demand Status
Limited
Fake Threat In the Open Market
34 pct.
Popularity
Medium
MSL Level
1 (Unlimited)
Manufacturer Pack Quantity
30
Part Number Series
STW28N
Manufacturer Package
TO-247-3
Supplier Device Package
TO-247
Mounting Style
Through Hole
Temperature Range - Operating
-55°C ~ 150°C
Power Dissipation (Maximum)
170W (Tc)
Input Capacitance (Ciss) (Maximum) at Vds
1500pF at 100V
Maximum Vgs
±25V
Gate Charge (Qg) (Maximum) at Vgs
34nC at 10V
Vgs(th) (Maximum) at Id
5V at 250μA
Rds On (Maximum) at Id, Vgs
160mOhm at 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) at 25°C
21A (Tc)
Drain to Source Voltage (Vdss)
600V
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Packaging
Tube
Manufacturer
STMicroelectronics

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