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STB35N60DM2

Transistors - FETs, MOSFETs - RF

Manufacturer No:
STB35N60DM2
Manufacture:
STMicroelectronics
Package:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet:
STB35N60DM2
Description:
MOSFET N-CH 600V 28A D2PAK / N-Channel 600 V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

In Stock

6080 pcs On sales

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Shipping Cost
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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

STMicroelectronics STB35N60DM2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB35N60DM2.

Category
Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr
STMicroelectronics
Series
MDmesh™ DM2
Package
Tape & Reel
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 100 V
Power Dissipation (Max)
210W (Tc)
Temperature Range - Operating
-55°C ~ 150°C (TJ)
Mounting
SMD (SMT)
Supplier Device Package
D2PAK (TO-263)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number
STB35
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-16357-6,497-16357-1,497-16357-2
Standard Package
1,000
Fake Threat In the Open Market
81 pct.

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