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STB23NM60N

Name: STB23NM60N
Brand: STMicroelectronics
Price: 2.28 USD
Rating: 4.8 (6586 reviews)

FETs - Single

Manufacturer No:: STB23NM60N
Manufacture:: STMicroelectronics
Datasheet:: STB23NM60N
Description:: N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET | MOSFET N-CH 600V 19A D2PAK

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6430 pcs On sales

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

STMicroelectronics STB23NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB23NM60N.

Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Manufacturer Homepage: www.st.com
MSL Level: 1 (Unlimited)
Manufacturer Pack Quantity: 1
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Style: SMD
Temperature Range - Operating: 150°C
Power Dissipation (Maximum): 150W
Input Capacitance (Ciss) (Maximum) at Vds: 2050pF at 50V
Gate Source Voltage (Maximum): ±25V
Gate Charge (Qg) (Maximum) at Vgs: 60nC at 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Rds On (Maximum) at Id, Vgs: 180mOhm at 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Id - Continuous Drain Current: 19A
Vds - Drain-Source Breakdown Voltage: 600V
Technology: MOSFET
Transistor Polarity: N-Channel
Status: Obsolete
Packaging: Reel
Manufacturer: STMicroelectronics
Categories: Discrete Semiconductor Products

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